The influence of crystal–field effects on the electronic transport properties of heavy–fermion systems: a semiphenomenological approach

نویسندگان

  • M. Huth
  • F. B. Anders
چکیده

The electronic transport properties of heavy–fermion systems were calculated based on a semiphenomenological approach to the lattice non–crossing approximation in the limit of infinite local correlations augmented by crystal– field effects. Within the scope of this calculation using the linearized Boltzmann theory in the relaxation time approximation the qualitative features of the temperature–dependent resistivity, the magnetoresistivity and the thermoelectric power can be successfully reproduced; this is exemplified by a comparison with experimental results on CeCu2Si2 . Typeset using REVTEX 1

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تاریخ انتشار 1997